SCT3105KLGC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 24A TO247N
$22.40
Available to order
Reference Price (USD)
1+
$16.97000
10+
$15.59400
25+
$14.94800
100+
$13.17040
450+
$12.52400
Exquisite packaging
Discount
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Enhance your circuit performance with SCT3105KLGC11, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SCT3105KLGC11 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 134W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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