SCT3120AW7TL
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 650V 21A TO263-7
$11.55
Available to order
Reference Price (USD)
1+
$11.55000
500+
$11.4345
1000+
$11.319
1500+
$11.2035
2000+
$11.088
2500+
$10.9725
Exquisite packaging
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Rohm Semiconductor presents SCT3120AW7TL, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SCT3120AW7TL delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 100W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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