SCTW40N120G2VAG
STMicroelectronics
STMicroelectronics
SICFET N-CH 1200V 33A HIP247
$23.12
Available to order
Reference Price (USD)
1+
$23.12000
500+
$22.8888
1000+
$22.6576
1500+
$22.4264
2000+
$22.1952
2500+
$21.964
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of SCTW40N120G2VAG, a premium Transistors - FETs, MOSFETs - Single from STMicroelectronics. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SCTW40N120G2VAG is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 290W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3
Related Products
onsemi
NVD5C446NT4G
onsemi
FQD18N20V2TM
Infineon Technologies
AUIRFR3504Z
Toshiba Semiconductor and Storage
TPN19008QM,LQ
Alpha & Omega Semiconductor Inc.
AOT2606L
Vishay Siliconix
SIR166DP-T1-GE3
Infineon Technologies
IPA60R460CEXKSA1
Infineon Technologies
BSC600N25NS3GATMA1
Infineon Technologies
BSP129L6327HTSA1
onsemi