Shopping cart

Subtotal: $0.00

SF1002GHC0G

Taiwan Semiconductor Corporation
SF1002GHC0G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 10A TO220AB
$0.00
Available to order
Reference Price (USD)
18,000+
$0.28000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 70pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Taiwan Semiconductor Corporation

BAV101 L1G

Rohm Semiconductor

RFN10TF6S

Rectron USA

FM502

Micro Commercial Co

EGP10D-TP

Vishay General Semiconductor - Diodes Division

VS-HFA16TB120-N3

Infineon Technologies

D6001N50TS05XPSA1

Vishay General Semiconductor - Diodes Division

MBRB1660HE3/81

Taiwan Semiconductor Corporation

SF28GHA0G

Vishay General Semiconductor - Diodes Division

VS-HFA25TB60-N3

Vishay General Semiconductor - Diodes Division

RS1PDHM3/84A

Top