SH8KA2GZETB
Rohm Semiconductor
Rohm Semiconductor
30V NCH+NCH MIDDLE POWER MOSFET
$1.50
Available to order
Reference Price (USD)
2,500+
$0.50400
Exquisite packaging
Discount
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Optimize your electronic circuits with Rohm Semiconductor s SH8KA2GZETB, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how SH8KA2GZETB can elevate your design and operational efficiency.
Specifications
- Product Status: Not For New Designs
- FET Type: 2 N-Channel (Dual)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 28mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
- Power - Max: 2.8W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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