SH8M13GZETB
Rohm Semiconductor
Rohm Semiconductor
MIDDLE POWER MOSFET SERIES (DUAL
$0.00
Available to order
Reference Price (USD)
2,500+
$0.38360
Exquisite packaging
Discount
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The SH8M13GZETB by Rohm Semiconductor is a standout in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Engineered for excellence, these components offer unmatched reliability and performance. Features such as high voltage tolerance, low gate charge, and superior thermal management make them a preferred choice. Applications range from industrial automation to consumer electronics. Don t miss out on the opportunity to integrate SH8M13GZETB into your systems contact us for more details and pricing.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A, 7A
- Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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