SH8M4TB1
Rohm Semiconductor

Rohm Semiconductor
MOSFET N/P-CH 30V 9A/7A 8SOIC
$0.00
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Reference Price (USD)
2,500+
$0.75740
Exquisite packaging
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Discover high-performance SH8M4TB1 from Rohm Semiconductor, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Rohm Semiconductor s SH8M4TB1 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A, 7A
- Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP