SH8MA3TB1
Rohm Semiconductor
Rohm Semiconductor
SH8MA3TB1 IS LOW ON-RESISTANCE A
$1.06
Available to order
Reference Price (USD)
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$1.06000
500+
$1.0494
1000+
$1.0388
1500+
$1.0282
2000+
$1.0176
2500+
$1.007
Exquisite packaging
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Boost your project s performance with Rohm Semiconductor s SH8MA3TB1, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, SH8MA3TB1 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of SH8MA3TB1.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 6A (Ta)
- Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V, 50mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V, 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V, 480pF @ 15V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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