SI1016X-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N/P-CH 20V SC89-6
$0.48
Available to order
Reference Price (USD)
3,000+
$0.18050
6,000+
$0.16950
15,000+
$0.15850
30,000+
$0.15080
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI1016X-T1-GE3 by Vishay Siliconix is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Vishay Siliconix s SI1016X-T1-GE3 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
- Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 250mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SC-89 (SOT-563F)
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