SI1022R-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 60V 330MA SC75A
$0.66
Available to order
Reference Price (USD)
3,000+
$0.20252
6,000+
$0.19018
15,000+
$0.17784
30,000+
$0.16920
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SI1022R-T1-GE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SI1022R-T1-GE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.25Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-75A
- Package / Case: SC-75, SOT-416
Related Products
Infineon Technologies
BSS84PH6433XTMA1
Microchip Technology
APT100M50J
Fairchild Semiconductor
HUF75823D3S
IXYS
MMIX1F520N075T2
Vishay Siliconix
IRFZ24STRRPBF
STMicroelectronics
STI34N65M5
Vishay Siliconix
IRF830LPBF
Alpha & Omega Semiconductor Inc.
AO4476A
onsemi
NTD4809NHT4G
onsemi