SI1029X-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N/P-CH 60V SC89-6
$0.53
Available to order
Reference Price (USD)
3,000+
$0.19855
6,000+
$0.18645
15,000+
$0.17435
30,000+
$0.16588
Exquisite packaging
Discount
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Experience the next level of semiconductor technology with Vishay Siliconix s SI1029X-T1-GE3, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for SI1029X-T1-GE3.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
- Power - Max: 250mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SC-89 (SOT-563F)
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