SI1401EDH-T1-BE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 12V 4A/4A SC70-6
$0.43
Available to order
Reference Price (USD)
1+
$0.43000
500+
$0.4257
1000+
$0.4214
1500+
$0.4171
2000+
$0.4128
2500+
$0.4085
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with SI1401EDH-T1-BE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SI1401EDH-T1-BE3 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6
- Package / Case: 6-TSSOP, SC-88, SOT-363
Related Products
Panjit International Inc.
PJQ2416_R1_00001
onsemi
FDD6630A
IXYS
IXTH140N075L2
Nexperia USA Inc.
PSMN013-30MLC,115
Vishay Siliconix
2N7002E-T1-GE3
IXYS
IXTR20P50P
Vishay Siliconix
SQM120N04-1M7L_GE3
NXP Semiconductors
BUK7Y98-80E,115
Diodes Incorporated
DMP2305UQ-7
IXYS