Shopping cart

Subtotal: $0.00

SI1922EDH-T1-BE3

Vishay Siliconix
SI1922EDH-T1-BE3 Preview
Vishay Siliconix
MOSFET 2N-CH 20V 1.3A SOT-363
$0.43
Available to order
Reference Price (USD)
1+
$0.43000
500+
$0.4257
1000+
$0.4214
1500+
$0.4171
2000+
$0.4128
2500+
$0.4085
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), 1.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 740mW (Ta), 1.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6

Related Products

Diodes Incorporated

DMN2041UVT-13

Rohm Semiconductor

QS8K13TCR

Fairchild Semiconductor

FDY4001CZ

Vishay Siliconix

SI4946BEY-T1-E3

Renesas Electronics America Inc

UPA3753GR-E1-AX

Vishay Siliconix

SQ4532AEY-T1_GE3

Rohm Semiconductor

SH8J66TB1

Vishay Siliconix

SI1902CDL-T1-GE3

Nexperia USA Inc.

BUK9K29-100E,115

Infineon Technologies

IRF7304TRPBF

Top