SI2301-3A
MDD
MDD
MOSFET SOT-23 P Channel 20V
$0.21
Available to order
Reference Price (USD)
1+
$0.20550
500+
$0.203445
1000+
$0.20139
1500+
$0.199335
2000+
$0.19728
2500+
$0.195225
Exquisite packaging
Discount
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Upgrade your electronic designs with SI2301-3A by MDD, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SI2301-3A ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 225mW (Ta)
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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