SI2308CDS-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 60V 2.6A SOT23-3
$0.41
Available to order
Reference Price (USD)
3,000+
$0.12160
6,000+
$0.11462
15,000+
$0.10763
30,000+
$0.09925
75,000+
$0.09576
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with SI2308CDS-T1-GE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SI2308CDS-T1-GE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 144mOhm @ 1.9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Vishay Siliconix
SI6415DQ-T1-BE3
Microchip Technology
APT12057LFLLG
Alpha & Omega Semiconductor Inc.
AONR66922
IXYS
IXFA4N85X
onsemi
NVMFS6H858NWFT1G
NXP USA Inc.
PMCXB1000UE147
Vishay Siliconix
IRLL014TRPBF-BE3
onsemi
NTMFS5C468NLT3G
Diodes Incorporated
DMN2710UTQ-13
onsemi