SI2309CDS-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 60V 1.6A SOT23-3
$0.58
Available to order
Reference Price (USD)
3,000+
$0.21660
6,000+
$0.20340
15,000+
$0.19020
30,000+
$0.18096
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover SI2309CDS-T1-GE3, a versatile Transistors - FETs, MOSFETs - Single solution from Vishay Siliconix, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Nexperia USA Inc.
BUK9M42-60EX
Vishay Siliconix
IRFPF50PBF
Renesas Electronics America Inc
TBB1005EMTL-H
onsemi
3LP01M-TL-E
Infineon Technologies
IPI50R299CP
Infineon Technologies
IPP50R199CPXKSA1
Infineon Technologies
IPB022N04LG
Alpha & Omega Semiconductor Inc.
AOD2610E
Infineon Technologies
IPW65R099CFD7AXKSA1
Infineon Technologies