SI2310-TP
Micro Commercial Co
Micro Commercial Co
MOSFET N-CH 60V 3A SOT23
$0.45
Available to order
Reference Price (USD)
3,000+
$0.07600
6,000+
$0.06840
15,000+
$0.06080
30,000+
$0.05700
75,000+
$0.05320
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SI2310-TP by Micro Commercial Co. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SI2310-TP inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
onsemi
FQP24N08
Toshiba Semiconductor and Storage
TPW4R50ANH,L1Q
onsemi
SFT1423-E
Diodes Incorporated
ZXMP10A18GTA
NTE Electronics, Inc
NTE2394
Toshiba Semiconductor and Storage
SSM5G10TU(TE85L,F)
Diodes Incorporated
2N7002H-13
IXYS
IXFP16N50P
Microchip Technology
APT1001R6BFLLG
Taiwan Semiconductor Corporation