SI2336DS-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 5.2A SOT23-3
$0.53
Available to order
Reference Price (USD)
3,000+
$0.19855
6,000+
$0.18645
15,000+
$0.17435
30,000+
$0.16588
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
SI2336DS-T1-GE3 by Vishay Siliconix is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, SI2336DS-T1-GE3 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Rectron USA
RM2304
STMicroelectronics
STD100N3LF3
Infineon Technologies
IRFP4768PBF
Vishay Siliconix
IRFB9N65APBF-BE3
Infineon Technologies
IRF135S203
Alpha & Omega Semiconductor Inc.
AON6522
Rohm Semiconductor
RE1C001UNTCL
Infineon Technologies
BSZ12DN20NS3GATMA1
Fairchild Semiconductor
FDFMA3P029Z
Vishay Siliconix