SI2356DS-T1-BE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 40-V (D-S) MOSFET
$0.42
Available to order
Reference Price (USD)
1+
$0.42000
500+
$0.4158
1000+
$0.4116
1500+
$0.4074
2000+
$0.4032
2500+
$0.399
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with SI2356DS-T1-BE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SI2356DS-T1-BE3 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 51mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Diodes Incorporated
DMN3200U-7
Fairchild Semiconductor
FQB9N50CFTM
Toshiba Semiconductor and Storage
TK8S06K3L(T6L1,NQ)
onsemi
NTP18N06LG
Infineon Technologies
IRFB4115PBF
Nexperia USA Inc.
PMN30UNEX
IXYS
IXFQ72N20X3
Vishay Siliconix
SIRC16DP-T1-RE3
Infineon Technologies
BSP321PH6327XTSA1
onsemi