SI3442BDV-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 3A 6TSOP
$0.25
Available to order
Reference Price (USD)
3,000+
$0.23925
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
SI3442BDV-T1-GE3 by Vishay Siliconix is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, SI3442BDV-T1-GE3 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 860mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Panjit International Inc.
PJA3460-AU_R1_000A1
STMicroelectronics
STB20N95K5
Honeywell Aerospace
HTNFET-T
Infineon Technologies
AUIRF7736M2TR
Renesas Electronics America Inc
RJK4002DPD-00#J2
Vishay Siliconix
IRF540STRLPBF
IXYS
IXFA16N50P3
Diodes Incorporated
DMP2035UVTQ-13
Vishay Siliconix
SIHG20N50C-E3
STMicroelectronics