SI3443BDV-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 3.6A 6TSOP
$0.28
Available to order
Reference Price (USD)
3,000+
$0.27115
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of SI3443BDV-T1-GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SI3443BDV-T1-GE3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Alpha & Omega Semiconductor Inc.
AOW11S60
onsemi
NTMS4800NR2G
onsemi
NTP125N02R
STMicroelectronics
STL24N65M2
Renesas Electronics America Inc
UPA2723UT1A-E1-AY
Rohm Semiconductor
RQ3E070BNTB1
Rohm Semiconductor
RS1E300GNTB
Vishay Siliconix
SI2369DS-T1-BE3
Infineon Technologies
IRFB3207PBF
Infineon Technologies