SI3469DV-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 5A 6TSOP
$0.69
Available to order
Reference Price (USD)
3,000+
$0.23862
6,000+
$0.22408
15,000+
$0.20954
30,000+
$0.19936
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SI3469DV-T1-E3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SI3469DV-T1-E3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 6.7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.14W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Infineon Technologies
IPI65R190CFDXKSA1
Infineon Technologies
IRFH7932TRPBF
Renesas Electronics America Inc
RJK0603DPN-A0#T2
Vishay Siliconix
IRF840STRLPBF
onsemi
NTMFS5C404NLT1G
Central Semiconductor Corp
2N7002 BK PBFREE
Panjit International Inc.
PJQ5463A_R2_00001
Infineon Technologies
IPLU300N04S4R8XTMA1
onsemi
NTB110N65S3HF
Nexperia USA Inc.