SI3585DV-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N/P-CH 20V 2A 6-TSOP
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The SI3585DV-T1-E3 by Vishay Siliconix is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Vishay Siliconix s SI3585DV-T1-E3 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Obsolete
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
- Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
- Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 830mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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