SI3900DV-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 20V 2A 6-TSOP
$0.80
Available to order
Reference Price (USD)
3,000+
$0.27120
6,000+
$0.25360
15,000+
$0.24480
30,000+
$0.24000
Exquisite packaging
Discount
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The SI3900DV-T1-E3 from Vishay Siliconix is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, SI3900DV-T1-E3 delivers consistent quality. Contact us now to learn more and secure your supply of Vishay Siliconix s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 830mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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