Shopping cart

Subtotal: $0.00

SI4288DY-T1-GE3

Vishay Siliconix
SI4288DY-T1-GE3 Preview
Vishay Siliconix
MOSFET 2N-CH 40V 9.2A 8SO
$1.45
Available to order
Reference Price (USD)
2,500+
$0.65600
5,000+
$0.62520
12,500+
$0.60320
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC

Related Products

Taiwan Semiconductor Corporation

TSM076NH04DCR RLG

Panjit International Inc.

PJX8803_R1_00001

Infineon Technologies

BSO220N03MDGXUMA1

Infineon Technologies

BSZ0910NDXTMA1

Vishay Siliconix

SQS944ENW-T1_GE3

Wolfspeed, Inc.

CAB450M12XM3

Diodes Incorporated

DMN3024LSD-13

Top