SI4490DY-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 200V 2.85A 8SO
$2.30
Available to order
Reference Price (USD)
2,500+
$0.92818
5,000+
$0.89597
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SI4490DY-T1-E3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SI4490DY-T1-E3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
IXYS
IXFX150N15
Central Semiconductor Corp
CXDM3069N TR PBFREE
Harris Corporation
BUZ76
STMicroelectronics
STB3NK60ZT4
onsemi
FDP054N10
IXYS
IXFK180N15P
Nexperia USA Inc.
PMV19XNEAR
onsemi
CPH6414-TL-E
Infineon Technologies
IRLZ34NPBF
Rohm Semiconductor