SI4500BDY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N/P-CH 20V 6.6A 8-SOIC
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Optimize your electronic circuits with Vishay Siliconix s SI4500BDY-T1-GE3, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how SI4500BDY-T1-GE3 can elevate your design and operational efficiency.
Specifications
- Product Status: Obsolete
- FET Type: N and P-Channel, Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A
- Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.3W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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