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SI4511DY-T1-GE3

Vishay Siliconix
SI4511DY-T1-GE3 Preview
Vishay Siliconix
MOSFET N/P-CH 20V 7.2A 8-SOIC
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Specifications

  • Product Status: Obsolete
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC

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