SI4816BDY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 30V 5.8A 8-SOIC
$1.72
Available to order
Reference Price (USD)
2,500+
$0.84005
5,000+
$0.81090
12,500+
$0.79500
Exquisite packaging
Discount
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Upgrade your electronic designs with Vishay Siliconix s SI4816BDY-T1-GE3, a top-tier choice in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. Known for their durability and high efficiency, these components are essential for modern electronics. Key features include robust construction, low on-resistance, and fast switching capabilities. Ideal for use in power supplies, motor control, and audio amplifiers. Reach out to us now to learn more about how SI4816BDY-T1-GE3 can meet your specific needs and boost your application performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
- Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1W, 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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