Shopping cart

Subtotal: $0.00

SI4838DY-T1-GE3

Vishay Siliconix
SI4838DY-T1-GE3 Preview
Vishay Siliconix
MOSFET N-CH 12V 17A 8SO
$1.85
Available to order
Reference Price (USD)
2,500+
$1.63856
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

Related Products

Vishay Siliconix

SIR167DP-T1-GE3

Vishay Siliconix

SIRA72DP-T1-GE3

Infineon Technologies

IRFR24N15DTRPBF

Infineon Technologies

IRL2910STRLPBF

Nexperia USA Inc.

BUK6D43-40PX

Rohm Semiconductor

RRQ045P03TR

Vishay Siliconix

IRFP260PBF

Top