SI4931DY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2P-CH 12V 6.7A 8SOIC
$1.29
Available to order
Reference Price (USD)
2,500+
$0.47921
5,000+
$0.45671
12,500+
$0.44064
Exquisite packaging
Discount
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Experience the next level of semiconductor technology with Vishay Siliconix s SI4931DY-T1-GE3, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for SI4931DY-T1-GE3.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 6.7A
- Rds On (Max) @ Id, Vgs: 18mOhm @ 8.9A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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