Shopping cart

Subtotal: $0.00

SI5515CDC-T1-E3

Vishay Siliconix
SI5515CDC-T1-E3 Preview
Vishay Siliconix
MOSFET N/P-CH 20V 4A 1206-8
$0.87
Available to order
Reference Price (USD)
3,000+
$0.35595
6,000+
$0.33285
15,000+
$0.32130
30,000+
$0.31500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™

Related Products

Diodes Incorporated

BSS84V-7

Nexperia USA Inc.

BUK9K25-40EX

Vishay Siliconix

SI1967DH-T1-E3

Rohm Semiconductor

SM6K2T110

Fairchild Semiconductor

FDW2510NZ

Diodes Incorporated

DMP2110UVT-7

Microchip Technology

APTM20DUM04G

Taiwan Semiconductor Corporation

TSM680P06DPQ56 RLG

Top