SI7139DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 40A PPAK SO-8
$1.62
Available to order
Reference Price (USD)
3,000+
$0.73144
6,000+
$0.69710
15,000+
$0.67257
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SI7139DP-T1-GE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SI7139DP-T1-GE3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 48W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Nexperia USA Inc.
PMPB55ENEAX
Diodes Incorporated
DMT6017LSS-13
Vishay Siliconix
IRLZ24LPBF
Micro Commercial Co
SI2305B-TP
Vishay Siliconix
SI2304BDS-T1-E3
Infineon Technologies
IPB65R190C6ATMA1
Nexperia USA Inc.
BSN20BKR
Vishay Siliconix
SIRA16DP-T1-GE3
Infineon Technologies
IPP45N06S409AKSA2
Fairchild Semiconductor