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SI7322ADN-T1-GE3

Vishay Siliconix
SI7322ADN-T1-GE3 Preview
Vishay Siliconix
MOSFET N-CH 100V 15.1A PPAK
$0.71
Available to order
Reference Price (USD)
3,000+
$0.29069
6,000+
$0.27183
15,000+
$0.26240
30,000+
$0.25725
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 57mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 26W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8

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