SI7804DN-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 6.5A PPAK1212-8
$1.31
Available to order
Reference Price (USD)
3,000+
$0.59040
6,000+
$0.56268
15,000+
$0.54288
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SI7804DN-T1-E3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SI7804DN-T1-E3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 18.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
Related Products
Rectron USA
RM5N800TI
STMicroelectronics
STU6N60M2
Vishay Siliconix
SQJQ404E-T1_GE3
Vishay Siliconix
SI2323DDS-T1-BE3
Nexperia USA Inc.
PSMN4R3-30PL,127
Infineon Technologies
IPI180N10N3GXKSA1
onsemi
NTHL027N65S3HF
Rectron USA
RM35P30LD
Diodes Incorporated
DMP21D0UT-7
IXYS