SI7820DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 200V 1.7A PPAK1212-8
$1.62
Available to order
Reference Price (USD)
3,000+
$0.67601
6,000+
$0.64427
15,000+
$0.62160
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SI7820DN-T1-GE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SI7820DN-T1-GE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
Related Products
Infineon Technologies
IRLR024NTRLPBF
IXYS
IXTT220N20X4HV
Panjit International Inc.
PJD50P04-AU_L2_000A1
Taiwan Semiconductor Corporation
TSM70N380CP ROG
onsemi
MCH6321-TL-W
IXYS
IXFB62N80Q3
STMicroelectronics
STD3NK90ZT4
onsemi
FDMS7556S
Sanken
FKI10198
Infineon Technologies