SI7842DP-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 30V 6.3A PPAK SO-8
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Boost your project s performance with Vishay Siliconix s SI7842DP-T1-E3, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, SI7842DP-T1-E3 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of SI7842DP-T1-E3.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.3A
- Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
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