SI8483DB-T2-E1
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 12V 16A 6MICRO FOOT
$0.59
Available to order
Reference Price (USD)
3,000+
$0.21985
6,000+
$0.20645
15,000+
$0.19305
30,000+
$0.18367
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of SI8483DB-T2-E1, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SI8483DB-T2-E1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-Micro Foot™ (1.5x1)
- Package / Case: 6-UFBGA
Related Products
Rohm Semiconductor
RSR025N05HZGTL
Diotec Semiconductor
DI070P04PQ
Panasonic Electronic Components
MTMF82310BBF
PN Junction Semiconductor
P1H06300D8
Infineon Technologies
IPN95R1K2P7ATMA1
STMicroelectronics
STP14NK50Z
Vishay Siliconix
IRFB9N60APBF-BE3
Infineon Technologies
IRLML0100TRPBF
Infineon Technologies
IPB70P04P409ATMA1
Alpha & Omega Semiconductor Inc.