SI8823EDB-T2-E1
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 2.7A 4MICRO FOOT
$0.43
Available to order
Reference Price (USD)
3,000+
$0.12179
6,000+
$0.11441
15,000+
$0.10702
30,000+
$0.09817
75,000+
$0.09448
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover SI8823EDB-T2-E1, a versatile Transistors - FETs, MOSFETs - Single solution from Vishay Siliconix, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 900mW (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
- Package / Case: 4-XFBGA
Related Products
Vishay Siliconix
IRF510PBF
Infineon Technologies
IRF1407PBF
Vishay Siliconix
SI3483CDV-T1-GE3
Panjit International Inc.
PJD16P04_L2_00001
Rohm Semiconductor
RD3S100AAFRATL
Fairchild Semiconductor
SFP9620
Renesas Electronics America Inc
2SK2858-T1-A
onsemi
5LP01SP-AC
onsemi
NTDS015N15MCT4G
Nexperia USA Inc.