SI8851EDB-T2-E1
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V PWR MICRO FOOT
$0.65
Available to order
Reference Price (USD)
3,000+
$0.26781
6,000+
$0.25043
15,000+
$0.24174
30,000+
$0.23700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SI8851EDB-T2-E1, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SI8851EDB-T2-E1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Power Micro Foot® (2.4x2)
- Package / Case: 30-XFBGA
Related Products
Rohm Semiconductor
RF4E060AJTCR
Toshiba Semiconductor and Storage
TK56A12N1,S4X
Vishay Siliconix
SI4874BDY-T1-E3
IXYS
IXTT80N20L
STMicroelectronics
STH240N75F3-6
STMicroelectronics
STP9N65M2
Vishay Siliconix
SI7141DP-T1-GE3
Vishay Siliconix
SI3477DV-T1-GE3
Renesas Electronics America Inc
2SK3484-AZ
Fairchild Semiconductor