SIA471DJ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 12.9A/30.3A PPAK
$0.62
Available to order
Reference Price (USD)
1+
$0.62000
500+
$0.6138
1000+
$0.6076
1500+
$0.6014
2000+
$0.5952
2500+
$0.589
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SIA471DJ-T1-GE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SIA471DJ-T1-GE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 30.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27.8 nC @ 10 V
- Vgs (Max): +16V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-70-6
- Package / Case: PowerPAK® SC-70-6
Related Products
IXYS
IXFH12N100P
Vishay Siliconix
SI8465DB-T2-E1
Fairchild Semiconductor
FDU6N50TU
Vishay Siliconix
SISS66DN-T1-GE3
Microchip Technology
TN2425N8-G
NXP USA Inc.
BUK652R0-30C,127
Infineon Technologies
IPB80N06S2L09ATMA2
Infineon Technologies
BSC265N10LSFGATMA1
STMicroelectronics
STW70N60DM6-4
Nexperia USA Inc.