SIA907EDJT-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2P-CH 20V 4.5A SC-70-6L
$0.58
Available to order
Reference Price (USD)
3,000+
$0.21660
6,000+
$0.20340
15,000+
$0.19020
30,000+
$0.18096
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic circuits with Vishay Siliconix s SIA907EDJT-T1-GE3, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how SIA907EDJT-T1-GE3 can elevate your design and operational efficiency.
Specifications
- Product Status: Not For New Designs
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 7.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SC-70-6 Dual
- Supplier Device Package: PowerPAK® SC-70-6 Dual
Related Products
Diodes Incorporated
DMN53D0LDW-7
Rohm Semiconductor
US6J12TCR
Fairchild Semiconductor
FDS6892A
Rohm Semiconductor
EM5K5T2R
Sanyo
CPH5617-TL-E
Diodes Incorporated
DMP3164LVT-7
onsemi
NDC7001C
Diodes Incorporated
DMP2065UFDB-13
Panjit International Inc.
PJL9809_R2_00001
Advanced Linear Devices Inc.