SIAA00DJ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 25V 20.1A/40A PPAK
$0.30
Available to order
Reference Price (USD)
3,000+
$0.30900
6,000+
$0.28895
15,000+
$0.27892
30,000+
$0.27345
Exquisite packaging
Discount
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Experience the power of SIAA00DJ-T1-GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SIAA00DJ-T1-GE3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 20.1A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 12.5 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-70-6
- Package / Case: PowerPAK® SC-70-6
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