SIHA24N80AE-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 800V 9A TO220
$3.62
Available to order
Reference Price (USD)
1+
$3.62000
500+
$3.5838
1000+
$3.5476
1500+
$3.5114
2000+
$3.4752
2500+
$3.439
Exquisite packaging
Discount
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Experience the power of SIHA24N80AE-GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SIHA24N80AE-GE3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
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