SIHB33N60E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 33A D2PAK
$6.47
Available to order
Reference Price (USD)
1+
$7.06000
10+
$6.32700
100+
$5.22810
500+
$4.27572
1,000+
$3.64080
2,500+
$3.46986
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SIHB33N60E-GE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SIHB33N60E-GE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Panjit International Inc.
PJD4NA50A_L2_00001
Vishay Siliconix
SIHP21N80AEF-GE3
Infineon Technologies
AUIRFR4620TRL
onsemi
RFP50N06
Diodes Incorporated
DMN3051L-7
Infineon Technologies
SPW17N80C3FKSA1
Vishay Siliconix
IRF540SPBF
onsemi
MMBF2201NT1
IXYS
IXFX140N25T
Vishay Siliconix