SIHG039N60E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 63A TO247AC
$11.67
Available to order
Reference Price (USD)
1+
$12.71000
10+
$11.48200
100+
$9.52000
500+
$8.04850
1,000+
$7.06752
Exquisite packaging
Discount
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Discover SIHG039N60E-GE3, a versatile Transistors - FETs, MOSFETs - Single solution from Vishay Siliconix, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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