SIHG70N60AEF-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 60A TO247AC
$8.34
Available to order
Reference Price (USD)
1+
$12.74000
10+
$11.62700
100+
$9.95840
500+
$8.56822
1,000+
$7.90097
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SIHG70N60AEF-GE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SIHG70N60AEF-GE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 410 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5348 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 417W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
Diodes Incorporated
DMN60H080DS-13
Diotec Semiconductor
2N7002W
Micro Commercial Co
BSS138KT-TP
Diodes Incorporated
ZXMP10A18KTC
GeneSiC Semiconductor
G3R350MT12J
Vishay Siliconix
SIHP17N60D-E3
Vishay Siliconix
SI2316BDS-T1-GE3
Infineon Technologies
IPB80N08S207ATMA1
onsemi
NDD03N60Z-1G
onsemi