SIHH070N60EF-T1GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 36A PPAK 8 X 8
$8.22
Available to order
Reference Price (USD)
1+
$8.22000
500+
$8.1378
1000+
$8.0556
1500+
$7.9734
2000+
$7.8912
2500+
$7.809
Exquisite packaging
Discount
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Vishay Siliconix presents SIHH070N60EF-T1GE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SIHH070N60EF-T1GE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 71mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2647 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 202W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: 8-PowerTDFN
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