SIHJ240N60E-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 12A PPAK SO-8
$3.00
Available to order
Reference Price (USD)
3,000+
$1.37511
6,000+
$1.32418
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents SIHJ240N60E-T1-GE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SIHJ240N60E-T1-GE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Harris Corporation
IRF353
onsemi
FCPF7N60NT
Vishay Siliconix
SI2318DS-T1-GE3
Fairchild Semiconductor
HUF76121P3
Taiwan Semiconductor Corporation
TSM5NC50CP ROG
Vishay Siliconix
SIHD6N65ET1-GE3
Sanken
FKP252
Alpha & Omega Semiconductor Inc.
AOT7S60L
STMicroelectronics
STB57N65M5
IXYS