SIHK055N60E-T1-GE3
Vishay Siliconix
Vishay Siliconix
E SERIES POWER MOSFET POWERPAK 1
$8.84
Available to order
Reference Price (USD)
1+
$8.84000
500+
$8.7516
1000+
$8.6632
1500+
$8.5748
2000+
$8.4864
2500+
$8.398
Exquisite packaging
Discount
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Optimize your electronic systems with SIHK055N60E-T1-GE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SIHK055N60E-T1-GE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 56mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3504 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 236W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK®10 x 12
- Package / Case: 8-PowerBSFN
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